TC518512FL-80DR Datasheet PDF (SILICON GATE CMOS PSEUDO STATIC RAM)

TC518512FL-80DR - SILICON GATE CMOS PSEUDO STATIC RAM

This page provides the datasheet information for the TC518512FL-80DR, a member of the TC518512PL-70DR SILICON GATE CMOS PSEUDO STATIC RAM family.

Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
Organization: 524,288 words x 8 bits.
Single 5V p.

Datasheet Details

Part number	TC518512FL-80DR
Manufacturer	Toshiba
File Size	315.88 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC518512FL-80DR Datasheet
Additional preview pages of the TC518512FL-80DR datasheet.

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Full PDF Text Transcription

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rOSHIBA TC518512PL/FL/FIL/TRL-70(DR) /80 (DR) /10 (DR) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface.

Published: Feb 15, 2017 |