TC51V8512AFT-12 Overview
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage. The TC51 V8512AF operates from a single 3.0V power supply.
TC51V8512AFT-12 Key Features
- Organization: 524,288 words x 8 bits
- Low voltage function: 3.0V±10%
- Data re