TC51V8512AFT-12 Datasheet PDF (SILICON GATE CMOS PSEUDO STATIC RAM)

TC51V8512AFT-12 - SILICON GATE CMOS PSEUDO STATIC RAM

This page provides the datasheet information for the TC51V8512AFT-12, a member of the TC51V8512AF-12 SILICON GATE CMOS PSEUDO STATIC RAM family.

Description

The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
Organization: 524,288 words x 8 bits.
Low voltage function: 3.0V±10%.
Data re.

Datasheet Details

Part number	TC51V8512AFT-12
Manufacturer	Toshiba
File Size	301.13 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC51V8512AFT-12 Datasheet
Additional preview pages of the TC51V8512AFT-12 datasheet.

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Full PDF Text Transcription

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rOSHIBA SILICON GATE CMOS TC51V8512AF/ AFT/ A1R-12/15 PRELIMINARY 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage. The TC51 V8512AF operates from a single 3.0V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC51V8512AF features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface.

Published: Feb 15, 2017 |