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TC55B328P - 32K x 8-Bit BiCMOS Static RAM

Description

The TC55B328P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (GE) and has an output enable input (OE) for fast memory access. The TC55B328P/J is suitable for use in high speed.

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Datasheet Details

Part number TC55B328P
Manufacturer Toshiba
File Size 196.57 KB
Description 32K x 8-Bit BiCMOS Static RAM
Datasheet download datasheet TC55B328P Datasheet

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Other Datasheets by Toshiba

Part Number Description
TC55B328P-10 32K x 8-Bit BiCMOS Static RAM
TC55B328P-12 32K x 8-Bit BiCMOS Static RAM
TC55B328J 32K x 8-Bit BiCMOS Static RAM
TC55B328J-10 32K x 8-Bit BiCMOS Static RAM
TC55B328J-12 32K x 8-Bit BiCMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA 1l:55B328P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B328P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B328P/J features low power dissipation when the device is deselected using chip enable (GE) and has an output enable input (OE) for fast memory access. The TC55B328P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B328P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
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