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TC55B328P - 32K x 8-Bit BiCMOS Static RAM

General Description

The TC55B328P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Key Features

  • low power dissipation when the device is deselected using chip enable (GE) and has an output enable input (OE) for fast memory access. The TC55B328P/J is suitable for use in high speed.

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Datasheet Details

Part number TC55B328P
Manufacturer Toshiba
File Size 196.57 KB
Description 32K x 8-Bit BiCMOS Static RAM
Datasheet download datasheet TC55B328P Datasheet

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Other Datasheets by Toshiba

Part Number Description
TC55B328P-10 32K x 8-Bit BiCMOS Static RAM
TC55B328P-12 32K x 8-Bit BiCMOS Static RAM
TC55B328J 32K x 8-Bit BiCMOS Static RAM
TC55B328J-10 32K x 8-Bit BiCMOS Static RAM
TC55B328J-12 32K x 8-Bit BiCMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA 1l:55B328P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B328P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B328P/J features low power dissipation when the device is deselected using chip enable (GE) and has an output enable input (OE) for fast memory access. The TC55B328P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B328P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.