Datasheet4U Logo Datasheet4U.com

TC55B4257J-12 - 256K x 4-Bit BiCMOS Static RAM

Download the TC55B4257J-12 datasheet PDF. This datasheet also covers the TC55B4257P variant, as both devices belong to the same 256k x 4-bit bicmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TC55B4257J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC55B4257J is suitable for use in.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55B4257P_Toshiba.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TC55B8128J-15 CMOS 1M-Bit Static RAM ETC
TC551001BFL-70L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFL-85L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFTL-70L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFTL-85L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TC55B4257J-15 256K x 4-Bit BiCMOS Static RAM
TC55B4257J-20 256K x 4-Bit BiCMOS Static RAM
TC55B4257J 256K x 4-Bit BiCMOS Static RAM
TC55B4257P 256K x 4-Bit BiCMOS Static RAM
TC55B4256J 256K x 4-Bit BiCMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA 1l:55B4257J-12/15/20 SILICON GATE BiCMOS 262,144 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B4257J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B4257J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC55B4257J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and main memory. All inputs and outputs are TIL compatible. The TC55B4257J is available in a 400mil width, 32-pin SOJ suitable for high density surface assembly.
Published: |