TC58BYG0S3HBAI6 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

Product Overview

Toshiba

Datasheet Details

Part number	TC58BYG0S3HBAI6
Manufacturer	Toshiba
File Size	313.81 KB
Description	1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58BYG0S3HBAI6 Datasheet
Additional preview pages of the TC58BYG0S3HBAI6 datasheet.

Product details

Description

The TC58BYG0S3HBAI6 is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.

Features

Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 1004 blocks Max 1024 blocks.
Power supply VCC = 1.7V to 1.95V.
Access time Cell array to register 40 µs typ. Serial Read Cycle 25 ns min.

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Published: Dec 11, 2014 |