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TC58BYG0S3HBAI6 Datasheet 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

Manufacturer: Toshiba

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Datasheet Details

Part number TC58BYG0S3HBAI6
Manufacturer Toshiba
File Size 313.81 KB
Description 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Datasheet download datasheet TC58BYG0S3HBAI6 Datasheet

General Description

The TC58BYG0S3HBAI6 is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.

The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.

The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

Overview

TC58BYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND.

Key Features

  • Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 1004 blocks Max 1024 blocks.
  • Power supply VCC = 1.7V to 1.95V.
  • Access time Cell array to register 40 µs typ. Serial Read Cycle 25 ns min.

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