* Organization Memory cell array Register Page size Block size x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes
* Modes Read, Reset, Auto Page Program, .

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow .

TC58NVG2S3ETA00

TC58NVG2S3EBAI5

TC58NVG2S0FBAI4

TC58NVG2S0FTA00

TC58NVG2S0FTAI0

TC58NVG2S0HBAI4

TC58NVG2S0HBAI6

TC58NVG2S0HTA00

TC58NVG2S0HTAI0

TC58NVG2D4BFT00

TC58NVG0S3AFT00

TC58NVG0S3AFT05

TC58NVG0S3ETA00