* . Excellent hpg Linearity : h FE (2)=23(Min.) at VcE=lV, I c =400mA . 1 Watt Amplifier Applications . Complementary to TEC8012 Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT 1.27 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu
TEC8013
75.96 KB
Silicon npn transistor.
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC8013 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING AP.
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