Datasheet Summary
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
AUDIO POWER AMPLIFIER APPLICATIONS.
Features
. High h FE : h FE=106~300 . 1 Watts Amplifier Applications. . plementary to TED1802
5.1 MAX.
Unit in mm
^
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
SYMBOL VCBO
RATING
UNIT
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
800 mA
Emitter Current
-800 mA
Collector Power Dissipation
600 mW
Junction Temperature
1. COLLECTOR
2. BASES
3. KMITTEK
Storage Temperature Range r s tg
-65-150
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Weight :...