Datasheet Summary
..
TOSHIBA
Oct. 1999
1. RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB pression Point Power Gain at 1dB pression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G1dB IDS f =13.75-14.5GHz 4.5 2-tone test Po=29dBm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 dB A % dBc °C
( Ta= Ta= 25°C )
MIN. TYP. MAX. UNIT 39.0 39.5 dBm
CONDITION
ηadd
IM3 ∆Tch
.
DataShee
2. ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
( Ta= Ta= 25°C...