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TIM1414-10LA-252 - Microwave Power GaAs FET

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www.DataSheet4U.com TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1dB VDS= 9V G1dB IDS f =13.75-14.5GHz 4.5 2-tone test Po=29dBm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 dB A % dBc °C ( Ta= Ta= 25°C ) MIN. TYP. MAX. UNIT 39.0 39.5 dBm CONDITION ηadd IM3 ∆Tch DataSheet4U.com DataShee 2. ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= Ta= 25°C ) MIN. TYP. MAX. UNIT -2.0 -5 2800 -3.5 -5.0 mS V A V °C/W CONDITION VDS= 3V IDS= 4.
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