TIM1414-10LA Datasheet | Toshiba

.. TOSHIBA MICROWAVE POWER GaAs FET Features - Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level - High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz - High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz - Broadband internally matched - Hermetically sealed package RF Performance Specifications (Ta = 25°C) Characteristic Output Power at 1dB pression Point Power Gain at 1dB pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 ∆G ηadd IM3 IDS2 ∆Tch Note 1 VDS = 9V f = 14.0 ~ 14.5 GHz Condition Unit dBm dB A dB % dBc Min. 40.0...