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TOSHIBA
MICROWAVE POWER GaAs FET
Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25°C)
Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 ∆G ηadd IM3 IDS2 ∆Tch Note 1 VDS = 9V f = 14.0 ~ 14.5 GHz Condition Unit dBm dB A dB % dBc Min. 40.0 5.0 – – – -42 – – Typ. 40.5 6.0 4.0 – 21 -45 4.0 – Max. – – 5.0
± 0.8
TIM1414-10LA
– – 5.
TIM1414-10LA Datasheet
