ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 42.0dBm at 14.0GHz to 14.5GHz ŋHIGH GAIN
G1dB= 6.0dB at 14.0GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -42dB.
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