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MICROWAVE POWER GaAs FET
TIM1414-15L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 42.0dBm at 14.0GHz to 14.5GHz ŋHIGH GAIN
G1dB= 6.0dB at 14.0GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -42dBc(Min.) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 9V IDSset= 4.0A f= 14.0 to 14.
TIM1414-15L Datasheet
