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TIM8596-8 - MICROWAVE POWER GaAs FET

Key Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM8596-8
Manufacturer Toshiba
File Size 373.49 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM8596-8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 6.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM8596-8 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS VDS= 9V IDSset= 4.0A f = 8.5 to 9.6GHz UNIT dBm dB A Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN. 38.5 5.0    TYP. MAX. 39.5  6.0  3.4 4.