* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 2.7 nC(typ.) Low drain-source on-resistance: RDS(ON) = 43mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging
TPC6010-H Datasheet (250.30 KB)
TPC6010-H
250.30 KB
N-channel mosfet.
TPC6010-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC6010-H 1. Applications High-Efficiency DC-DC Converters Notebook .
📁 Related Datasheet
TPC6011 N-Channel MOSFET (Toshiba)
TPC6012 N-Channel MOSFET (Toshiba)
TPC6001 N-Channel MOSFET (Toshiba Semiconductor)
TPC6002 N-Channel MOSFET (Toshiba Semiconductor)
TPC6003 N-Channel MOSFET (Toshiba Semiconductor)
TPC6004 N-Channel MOSFET (Toshiba Semiconductor)
TPC6005 N-Channel MOSFET (Toshiba Semiconductor)
TPC6006-H N-Channel MOSFET (Toshiba Semiconductor)
TPC6008-H MOSFETs (Toshiba Semiconductor)
TPC6009-H MOSFETs (Toshiba Semiconductor)
