Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Efficiency DC-DC Converter Applications
- -
- -
- Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.) (VDS =
- 10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 30 V) Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 mA) Unit:...