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TPC6109-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC6109-H
High-Efficiency DC-DC Converter Applications
• • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.) (VDS = −10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) (Note 3) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −30 −30 ±20 −5 −20 2.2 0.7 16.3 −5 0.
TPC6109-H Datasheet
