TPC6010-H - N-Channel MOSFET

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Toshiba

Part number	TPC6010-H
Manufacturer	Toshiba
File Size	250.30 KB
Description	N-Channel MOSFET
Datasheet	TPC6010-H Datasheet
Additional preview pages of the TPC6010-H datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 2.7 nC(typ. ) Low drain-source on-resistance: RDS(ON) = 43mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 5, 6: Drain 3: Gate 4: Source VS-6 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drai.

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Published: Nov 11, 2013 |