Datasheet Summary
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSIV)
Notebook PC Applications Portable Equipment Applications
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- Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) ( VGS = 10V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
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