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TPC6011
TOSHIBA Field Effect Transistor
TPC6011
Silicon N Channel MOS Type (U-MOSIV)
Notebook PC Applications Portable Equipment Applications
• • • Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) ( VGS = 10V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating 30 30 ±20 6 A 24 Unit V V V
Drain current
Drain power dissipation Drain power dissipation
JEDEC
2.2 0.7 2.
TPC6011 Datasheet
