TPC6012 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) Notebook PC Applications Portable Equipment Applications - - - - Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Unit:...