TPC6012 Description
TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPC6012 Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode:.