TPC6011 Overview
TPC6011 TOSHIBA Field Effect Transistor TPC6011 Silicon N Channel MOS Type (U-MOSIV) Notebook PC Applications Portable Equipment Applications Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) ( VGS = 10V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode:.