TPC6012 Datasheet (Toshiba) - N-Channel MOSFET

TPC6012 - N-Channel MOSFET

TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPC6012 Notebook PC Applications Portable Equipment Applications * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate volta

TPC6012 Features

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TPC6012 Datasheet - Toshiba

TPC6012 - N-Channel MOSFET

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