TPC6109-H Overview
TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.) (VDS = −10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current:.