TPC8407 Datasheet | Toshiba

MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) 1. Applications - Motor Drivers - CCFL Inverters - Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance P-channel RDS(ON) = 18 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 14 mΩ (typ.) (VGS = 10 V) (4) Low leakage current P-channel IDSS = -10 µA (VDS = -30 V), N-channel IDSS = 10 µA (VDS = 30 V) (5) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit SOP-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8:...