* (1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.18 V (max) (IC = -1.0 A, IB = -33 mA) (3) High-speed switching: tf = 90 ns (typ.) (IC =1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4.
TPCP8608 Datasheet (452.26 KB)
TPCP8608
452.26 KB
Silicon pnp transistor.
Bipolar Transistors Silicon PNP Epitaxial Type TPCP8608 TPCP8608 1. Applications High-Speed Switching DC-DC Converters 2. Featur.
📁 Related Datasheet
TPCP8601 Silicon PNP Transistor (Toshiba Semiconductor)
TPCP8602 Silicon PNP Transistor (Toshiba Semiconductor)
TPCP8603 MOSFET (Toshiba Semiconductor)
TPCP8604 Silicon PNP Transistor (Toshiba)
TPCP8605 Silicon PNP Transistor (Toshiba)
TPCP8606 Silicon PNP Transistor (Toshiba)
TPCP8607 Silicon PNP Transistor (Toshiba)
TPCP8001-H MOSFET (Toshiba Semiconductor)
TPCP8002 MOSFET (Toshiba Semiconductor)
TPCP8003-H MOSFET (Toshiba Semiconductor)
