Datasheet4U.com

TPCP8608 - Silicon PNP Transistor

Toshiba

📥 Download Datasheet

TPCP8608 Datasheet Preview — Preview of TPCP8608 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TPCP8608
Manufacturer	Toshiba
File Size	452.26 KB
Description	Silicon PNP Transistor
Datasheet	TPCP8608-Toshiba.pdf

TPCP8608 Product details

Features

(1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.18 V (max) (IC = -1.0 A, IB = -33 mA) (3) High-speed switching: tf = 90 ns (typ. ) (IC =1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-11 2023-09-27 Rev.1.0 TPCP8608 4. Absolute M.

📁 TPCP8608 Similar Datasheet

TPCP8601 - Silicon PNP Transistor (Toshiba Semiconductor)
TPCP8602 - Silicon PNP Transistor (Toshiba Semiconductor)
TPCP8603 - MOSFET (Toshiba Semiconductor)
TPCP8001-H - MOSFET (Toshiba Semiconductor)
TPCP8002 - MOSFET (Toshiba Semiconductor)
TPCP8003-H - MOSFET (Toshiba Semiconductor)
TPCP8004 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TPCP8005-H - Field Effect Transistor (Toshiba Semiconductor)

Other Datasheets by Toshiba

TPCP8604 - Silicon PNP Transistor
TPCP8605 - Silicon PNP Transistor
TPCP8606 - Silicon PNP Transistor
TPCP8607 - Silicon PNP Transistor
TPCP8011 - Silicon N-Channel MOSFET
TPCP8404 - Field Effect Transistor

Published: Jan 30, 2024 |