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TPCP8608 - Silicon PNP Transistor

Key Features

  • (1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.18 V (max) (IC = -1.0 A, IB = -33 mA) (3) High-speed switching: tf = 90 ns (typ. ) (IC =1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-11 2023-09-27 Rev.1.0 TPCP8608 4. Absolute M.

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Datasheet Details

Part number TPCP8608
Manufacturer Toshiba
File Size 452.26 KB
Description Silicon PNP Transistor
Datasheet download datasheet TPCP8608 Datasheet

Full PDF Text Transcription for TPCP8608 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPCP8608. For precise diagrams, and layout, please refer to the original PDF.

Bipolar Transistors Silicon PNP Epitaxial Type TPCP8608 TPCP8608 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 200...

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ing • DC-DC Converters 2. Features (1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.18 V (max) (IC = -1.0 A, IB = -33 mA) (3) High-speed switching: tf = 90 ns (typ.) (IC =1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-11 2023-09-27 Rev.1.0 TPCP8608 4.

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