Datasheet4U Logo Datasheet4U.com

TPD1053F - Silicon Monolithic Power MOS

Features

  • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOSFET on a single chip. SOP8-P-1.27A Weight: 0.08 g (Typ. ).
  • One side of load can be grounded to a high-side switch.
  • Can directly drive a power load from a microprocessor.
  • Built-in protection against over temperature and load short-circuiting.
  • Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circui.

📥 Download Datasheet

Datasheet preview – TPD1053F

📁 Similar Datasheet

  • TPD1008SA - High-side Power Switch (Toshiba Semiconductor)
  • TPD1011S - High-side Power Switch (Toshiba Semiconductor)
  • TPD1018F - HIGH SIDE POWER SWITCH (Toshiba Semiconductor)
  • TPD1024S - Silicon Monolithic Power MOS (Toshiba Semiconductor)
  • TPD1028BS - Silicon Monolithic Power MOS (Toshiba Semiconductor)
  • TPD1030F - 2-IN-1 Low-Side Switch (Toshiba Semiconductor)
  • TPD1032F - 2-IN-1 Low-Side Power Switch (Toshiba Semiconductor)
  • TPD1033F - High-side Power Switch (Toshiba Semiconductor)
  • TPD1034F - High-side Power Switch (Toshiba Semiconductor)
  • TPD1036F - 2-IN-1 Low-Side Power Switch (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TPD1053F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1053F Motor, Solenoid, Lamp Drivers High-side Power Switch The TPD1053F is a monolithic power IC for high-side switches. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection and diagnostic functions. Features • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOSFET on a single chip. SOP8-P-1.27A Weight: 0.08 g (Typ.) • One side of load can be grounded to a high-side switch. • Can directly drive a power load from a microprocessor. • Built-in protection against over temperature and load short-circuiting.
Published: |