TPD1052F
TPD1052F is Silicon Monolithic Power MOS manufactured by Toshiba.
Features z A structure that incorporates Bi-CMOS control circuitry and a power MOSFET (DMOS) on a single chip. z One side of the load can be grounded.
SON8-P-0303-0.65 z Can be directly driven from a microprocessor. z Overtemperature and load short-circuit (Overcurrent) protections are built in.
Weight: 0.017g (typ.) z Incorporates a diagnosis function that allows diagnosis output to be read externally at load short (Overcurrent), overtemperature. z Low ON- resistance. : RDS(ON) = 0.8Ω (Max) @VDD = 12V, IO = 0.5A, Tch=25℃ z Low supply current. : IDD = 10μA (Max), @VDD = 12V, VIN =...