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TPD1052F - Silicon Monolithic Power MOS

Key Features

  • z A structure that incorporates Bi-CMOS control circuitry and a power MOSFET (DMOS) on a single chip. z One side of the load can be grounded. SON8-P-0303-0.65 z Can be directly driven from a microprocessor. z Overtemperature and load short-circuit (Overcurrent) protections are built in. Weight: 0.017g (typ. ) z Incorporates a diagnosis function that allows diagnosis output to be read externally at load short (Overcurrent), overtemperature. z Low ON- resistance. : RDS(ON) = 0.8Ω (Max) @VDD.

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Datasheet Details

Part number TPD1052F
Manufacturer Toshiba
File Size 257.30 KB
Description Silicon Monolithic Power MOS
Datasheet download datasheet TPD1052F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1052F High-side Power Switch for Motor, Solenoid and Lamp Drivers TPD1052F The TPD1052F is a monolithic power IC intended for high-side load switching applications. The input can be directly driven from CMOS or TTL logic (e.g., an MPU). The TPD1052F provides intelligent protection and diagnostic functions. Features z A structure that incorporates Bi-CMOS control circuitry and a power MOSFET (DMOS) on a single chip. z One side of the load can be grounded. SON8-P-0303-0.65 z Can be directly driven from a microprocessor. z Overtemperature and load short-circuit (Overcurrent) protections are built in. Weight: 0.017g (typ.