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TPD1053F - Silicon Monolithic Power MOS

Key Features

  • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOSFET on a single chip. SOP8-P-1.27A Weight: 0.08 g (Typ. ).
  • One side of load can be grounded to a high-side switch.
  • Can directly drive a power load from a microprocessor.
  • Built-in protection against over temperature and load short-circuiting.
  • Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circui.

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Datasheet Details

Part number TPD1053F
Manufacturer Toshiba
File Size 232.29 KB
Description Silicon Monolithic Power MOS
Datasheet download datasheet TPD1053F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPD1053F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1053F Motor, Solenoid, Lamp Drivers High-side Power Switch The TPD1053F is a monolithic power IC for high-side switches. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection and diagnostic functions. Features • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOSFET on a single chip. SOP8-P-1.27A Weight: 0.08 g (Typ.) • One side of load can be grounded to a high-side switch. • Can directly drive a power load from a microprocessor. • Built-in protection against over temperature and load short-circuiting.