TPD1058FA Datasheet | Toshiba

Features - A monolithic power IC with a new structure bining a control block and a power MOSFET (DMOS) on single chip. - AEC-Q100 qualified. - Can directly drive a power load from CMOS or TTL logic. P-WSON10-0303-0.50-001 - Built-in protection against overvoltage (active clamp), over temperature (thermal shutdown), and over current. Weight: 0.02 g (typ.) - Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circuiting, opening, or over temperature - Low Drain-Source ON-resistance: RDS (ON) = 0.1 Ω (Max) @VDD = 5 V, VSTBY = VIN = 5V, IO = 2 A, Tch = 25 °C - Low Standby Current: IDD = 10μA (Max) @VSTBY = VIN = 0V, VDD = 5V, Tch = -40 to 125°C - WSON10 package with embossed-tape packing. Pin Assignment (top view) Marking 1 VDD 2 STBY 3 GND 4 GND 5 GND (TOP VIEW) 10 DIAG 9 IN 8 N.C. 7 OUT 6 OUT 1058FA - Part No. (or abbreviation code) Lot No. The last 2digit of calendar year + weekly code (2digit) Toshiba house No. (6digit) - on the lower left of the marking indicates Pin 1 Note: Due to its MOS structure, this product is sensitive to static electricity. © 2020 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2015-04 2020-06-23 Block Diagram / Application Circuit Battery voltage VBAT (12V) Regulator DIAG VDD STBY VDD IN 100kΩ (typ.) 100kΩ...