* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ.) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit
TPH2R306NH Datasheet (234.79 KB)
TPH2R306NH
234.79 KB
Mosfets.
TPH2R306NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R306NH 1. Applications DC-DC Converters Switching Voltage Regul.
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