TPN30008NH - MOSFETs

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Toshiba

Part number	TPN30008NH
Manufacturer	Toshiba
File Size	228.75 KB
Description	MOSFETs
Datasheet	TPN30008NH Datasheet
Additional preview pages of the TPN30008NH datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.1 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-sou.

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Published: Aug 29, 2014 |