Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
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- Switching Voltage Regulators DC-DC Converters Motor Drivers
2. Features
(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 6.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4....