Datasheet4U Logo Datasheet4U.com

TPN12008QM - Silicon N-Channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ. ) (3) Small output charge: Qoss = 21.1 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN12008QM TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial.

📥 Download Datasheet

Datasheet Details

Part number TPN12008QM
Manufacturer Toshiba
File Size 490.57 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPN12008QM Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPN3021 TRIPOLAR OVERVOLTAGE PROTECTION STMicroelectronics
TPNA0505S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0509S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0512S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0515S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER

Other Datasheets by Toshiba

Part Number Description
TPN1200APL Silicon N-channel MOSFET
TPN11003NL MOSFETs
TPN11006NL MOSFET
TPN11006PL Silicon N-channel MOSFET
TPN1110ENH Silicon N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN12008QM 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ.) (3) Small output charge: Qoss = 21.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN12008QM TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-02 2020-02-18 Rev.1.0 TPN12008QM 4.