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TPN11006PL - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ. ) (3) Small output charge: Qoss = 14.4 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN11006PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-07 2016-09-20 Rev.

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Datasheet Details

Part number TPN11006PL
Manufacturer Toshiba
File Size 453.36 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPN11006PL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11006PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ.) (3) Small output charge: Qoss = 14.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN11006PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-07 2016-09-20 Rev.1.0 TPN11006PL 4.