TPN11006PL - Silicon N-channel MOSFET

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Toshiba

Part number	TPN11006PL
Manufacturer	Toshiba
File Size	453.36 KB
Description	Silicon N-channel MOSFET
Datasheet	TPN11006PL Datasheet
Additional preview pages of the TPN11006PL datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ. ) (3) Small output charge: Qoss = 14.4 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN11006PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-07 2016-09-20 Rev.

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Published: Feb 26, 2025 |