Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS-H)
1. Applications
- - Switching Voltage Regulators DC-DC Converters
2. Features
(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 12.6 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4....