Datasheet4U Logo Datasheet4U.com

TPN1200APL - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 7.5 nC (typ. ) (3) Small output charge: Qoss = 24 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN1200APL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial p.

📥 Download Datasheet

Datasheet Details

Part number TPN1200APL
Manufacturer Toshiba
File Size 516.76 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPN1200APL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPN3021 TRIPOLAR OVERVOLTAGE PROTECTION STMicroelectronics
TPNA0505S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0509S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0512S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0515S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER

Other Datasheets by Toshiba

Part Number Description
TPN12008QM Silicon N-Channel MOSFET
TPN11003NL MOSFETs
TPN11006NL MOSFET
TPN11006PL Silicon N-channel MOSFET
TPN1110ENH Silicon N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1200APL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 7.5 nC (typ.) (3) Small output charge: Qoss = 24 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPN1200APL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2017-10 2019-10-18 Rev.2.0 TPN1200APL 4.