TPN3300ANH - MOSFETs

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Toshiba

Part number	TPN3300ANH
Manufacturer	Toshiba
File Size	234.05 KB
Description	MOSFETs
Datasheet	TPN3300ANH Datasheet
Additional preview pages of the TPN3300ANH datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-so.

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Published: Aug 29, 2014 |