TPN6R003NL - MOSFET

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Toshiba

Part number	TPN6R003NL
Manufacturer	Toshiba
File Size	233.52 KB
Description	MOSFET
Datasheet	TPN6R003NL Datasheet
Additional preview pages of the TPN6R003NL datasheet.

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 4.3 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 1 2013-04-18 Rev.1.0 TPN6R003NL 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source volt.

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Published: Aug 29, 2014 |