TPW4R50ANH mosfet equivalent, silicon n-channel mosfet.
(1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS .
* DC-DC Converters
* Switching Voltage Regulators
* Motor Drivers
2. Features
(1) High-speed switching (2) S.
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