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TRS4E65H Datasheet, Diode, Toshiba

TRS4E65H Datasheet, Diode, Toshiba

TRS4E65H

datasheet Download (Size : 381.72KB)

TRS4E65H Datasheet
TRS4E65H

datasheet Download (Size : 381.72KB)

TRS4E65H Datasheet

TRS4E65H Features and benefits

TRS4E65H Features and benefits

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 12 nC (typ.) (4) Low reverse current: IR = 0.6 µA (typ.

TRS4E65H Application

TRS4E65H Application


* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies
* DC-DC Converters 2. Featu.

TRS4E65H Description

TRS4E65H Description

SiC Schottky Barrier Diode

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TRS4E65H Page 1 TRS4E65H Page 2 TRS4E65H Page 3

TAGS

TRS4E65H
SiC
Schottky
Barrier
Diode
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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