TRS4V65H SiC Schottky Barrier Diode

Toshiba

Description

SiC Schottky Barrier Diode TRS4V65H 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppli.

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Datasheet Specifications

Part number: TRS4V65H
Manufacturer: Toshiba ↗
File Size: 376.59 KB
Datasheet: TRS4V65H-Toshiba.pdf
Description: SiC Schottky Barrier Diode

Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 12nC (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) 3. Packaging and Internal Circuit DFN8x8 TRS4V65H 1, 2: N. C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic De

Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

TRS4V65H Distributors

📁 Related Datasheet

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TRS4V65H SiC Schottky Barrier Diode Toshiba

Toshiba TRS4V65H-like datasheet