TRS4V65H - SiC Schottky Barrier Diode

Toshiba

Datasheet Details

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 12nC (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) 3. Packaging and Internal Circuit DFN8x8 TRS4V65H 1, 2: N. C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-06-21 Rev.2.0 TRS4V65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbo.

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Published: Jul 19, 2023 |