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TRS10E65H Datasheet - Toshiba

TRS10E65H SiC Schottky Barrier Diode

TRS10E65H Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L TRS10E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corp

TRS10E65H Datasheet (426.78 KB)

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Datasheet Details

Part number:

TRS10E65H

Manufacturer:

Toshiba ↗

File Size:

426.78 KB

Description:

Sic schottky barrier diode.

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