* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L TRS10E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corp
TRS10E65H Datasheet (426.78 KB)
TRS10E65H
426.78 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
TRS10E65H
1. Applications
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Suppl.
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