* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.) 3. Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba El
TRS10E65F Datasheet (288.81 KB)
TRS10E65F
288.81 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
TRS10E65F
1. Applications
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Suppl.
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