Datasheet4U.com

TRS10E65F - SiC Schottky Barrier Diode

Toshiba

📥 Download Datasheet

TRS10E65F Datasheet Preview — Preview of TRS10E65F PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TRS10E65F
Manufacturer	Toshiba ↗
File Size	288.81 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS10E65F-Toshiba.pdf

TRS10E65F Product details

Features

(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ. ) (4) The reverse current is small. : IR = 0.5 µA (Typ. ) 3. Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-07 2018-06-27 Rev.2.0 TRS10E65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteris.

📁 TRS10E65F Similar Datasheet

TRS10A65F - SiC Schottky Barrier Diode (INCHANGE)
TRS1-0MCR00V - Thermal Reed Switch (KEMET)
TRS1-0MCR01V - Thermal Reed Switch (KEMET)
TRS1-0MLR00V - Thermal Reed Switch (KEMET)
TRS1-0MSR01EV - Thermal Reed Switch (KEMET)
TRS1-100MCR00V - Thermal Reed Switch (KEMET)
TRS1-100MCR01V - Thermal Reed Switch (KEMET)
TRS1-100MLR00V - Thermal Reed Switch (KEMET)

Other Datasheets by Toshiba

TRS10E65C - SiC Schottky Barrier Diode
TRS10E65H - SiC Schottky Barrier Diode
TRS10A65C - SiC Schottky Barrier Diode
TRS10V65H - SiC Schottky Barrier Diode
TRS12A65F - SiC Schottky Barrier Diode
TRS12E65H - SiC Schottky Barrier Diode

Published: Dec 9, 2020 |