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TRS10E65F Datasheet - Toshiba

TRS10E65F SiC Schottky Barrier Diode

TRS10E65F Features

* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.) 3. Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba El

TRS10E65F-Toshiba.pdf

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Datasheet Details

Part number:

TRS10E65F

Manufacturer:

Toshiba ↗

File Size:

288.81 KB

Description:

Sic schottky barrier diode.

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TRS10E65F TRS10E65F SiC Schottky Barrier Diode Toshiba

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