* (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 92 A (max) (3) Low junction capacitance: Cj = 44 pF (typ.) (4) Low reverse current: IR = 0.6 µA (typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS12A65F TO-220F-2L 1: Cathode 2
TRS12A65F Datasheet (253.05 KB)
TRS12A65F
253.05 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
TRS12A65F
1. Applications
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Suppl.
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