Datasheet Specifications
- Part number
- TRS12A65F
- Manufacturer
- Toshiba ↗
- File Size
- 253.05 KB
- Datasheet
- TRS12A65F-Toshiba.pdf
- Description
- SiC Schottky Barrier Diode
Description
SiC Schottky Barrier Diode TRS12A65F 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppl.
Features
* (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 92 A (max) (3) Low junction capacitance: Cj = 44 pF (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS12A65F TO-220F-2L 1: Cathode 2Applications
* Power Factor CorrectionTRS12A65F Distributors
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