TRS12A65F Datasheet, diode equivalent, Toshiba

TRS12A65F Features

• Diode (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 92 A (max) (3) Low junction capacitance: Cj = 44 pF (typ.) (4) Low reverse current: IR = 0.6

PDF File Details

Part number:

TRS12A65F

Manufacturer:

Toshiba (https://www.toshiba.com/)

File Size:

253.05kb

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📄 Datasheet

Description:

Sic schottky barrier diode.

TRS12A65F Application

• Applications
• Power Factor Correction
• Solar Inverters
• Uninterruptible Power Supplies
• DC-DC Converters 2. Feat

TAGS

TRS12A65F

Toshiba

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