* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 79A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS10A65F TO-220F-2L 1: Cath
TRS10A65F Datasheet (272.96 KB)
TRS10A65F
272.96 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
TRS10A65F
1. Applications
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Suppl.
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