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TRS10A65F Datasheet - Toshiba

TRS10A65F SiC Schottky Barrier Diode

TRS10A65F Features

* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 79A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 ยตA (Typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS10A65F TO-220F-2L 1: Cath

TRS10A65F Datasheet (272.96 KB)

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Datasheet Details

Part number:

TRS10A65F

Manufacturer:

Toshiba โ†—

File Size:

272.96 KB

Description:

Sic schottky barrier diode.

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Stock and price

Distributor
Toshiba America Electronic Components
TRS10A65F,S1Q
0 In Stock
Qty : 500 units
Unit Price : $2.61

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TRS10A65F SiC Schottky Barrier Diode Toshiba

TRS10A65F Distributor