Datasheet Specifications
- Part number
- TRS10A65F
- Manufacturer
- Toshiba ↗
- File Size
- 272.96 KB
- Datasheet
- TRS10A65F-Toshiba.pdf
- Description
- SiC Schottky Barrier Diode
Description
SiC Schottky Barrier Diode TRS10A65F 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppl.
Features
* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 79A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ. ) (4) The reverse current is small. : IR = 0.5 µA (Typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS10A65F TO-220F-2L 1: CathApplications
* Power Factor CorrectionTRS10A65F Distributors
📁 Related Datasheet
📌 All Tags