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TRS10A65C - SiC Schottky Barrier Diode

Toshiba

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Datasheet Details

Part number	TRS10A65C
Manufacturer	Toshiba ↗
File Size	170.51 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS10A65C-Toshiba.pdf

TRS10A65C Product details

Features

(1) Forward DC current IF(DC) = 10 A (2) Repetitive peak reverse voltage VRRM = 650 V 3. Packaging and Internal Circuit Pin Assignment TRS10A65C 1: Cathode 2: Anode TO-220F-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Isolation voltage (t = 1.0 s) Mounting torque VRRM IF(DC) IFP I2t Tj.

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Published: Dec 9, 2020 |