TRS10E65C Datasheet - Toshiba

TRS10E65C - SiC Schottky Barrier Diode

TRS10E65C Features

* (1) Forward DC current: IF(DC) = 10 A (2) Repetitive peak reverse voltage: VRRM = 650 V 3. Packaging and Internal Circuit TRS10E65C 1: Cathode 2: Anode TO-220-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive pea

TRS10E65C-Toshiba.pdf

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Datasheet Details

Part number:

TRS10E65C

Manufacturer:

Toshiba ↗

File Size:

172.41 KB

Description:

Sic schottky barrier diode.

TRS10E65C Distributor

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TRS10E65C SiC Schottky Barrier Diode Toshiba