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TRS10E65C - SiC Schottky Barrier Diode

Toshiba

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Datasheet Details

Part number	TRS10E65C
Manufacturer	Toshiba ↗
File Size	172.41 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS10E65C-Toshiba.pdf

TRS10E65C Product details

Features

(1) Forward DC current: IF(DC) = 10 A (2) Repetitive peak reverse voltage: VRRM = 650 V 3. Packaging and Internal Circuit TRS10E65C 1: Cathode 2: Anode TO-220-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Mounting torque VRRM IF(DC) IFP I2t Tj Tstg TOR (Note 1) (Note 2) 650 10 100 12.5.

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Published: Dec 9, 2020 |