* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 µA (typ.) 3. Packaging and Internal Circuit DFN8x8 TRS10V65H 1, 2: N.C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic
TRS10V65H Datasheet (441.97 KB)
TRS10V65H
441.97 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode TRS10V65H 1. Applications Power Factor Correction Solar Inverters Uninterruptible Power Suppl.
📁 Related Datasheet
TRS10A65C SiC Schottky Barrier Diode (Toshiba)
TRS10A65F SiC Schottky Barrier Diode (INCHANGE)
TRS10A65F SiC Schottky Barrier Diode (Toshiba)
TRS10E65C SiC Schottky Barrier Diode (Toshiba)
TRS10E65F SiC Schottky Barrier Diode (Toshiba)
TRS10E65H SiC Schottky Barrier Diode (Toshiba)
TRS1-0MCR00V Thermal Reed Switch (KEMET)
TRS1-0MCR01V Thermal Reed Switch (KEMET)
TRS1-0MLR00V Thermal Reed Switch (KEMET)
TRS1-0MSR01EV Thermal Reed Switch (KEMET)
