TRS10V65H Datasheet - Toshiba

TRS10V65H - SiC Schottky Barrier Diode

TRS10V65H Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 µA (typ.) 3. Packaging and Internal Circuit DFN8x8 TRS10V65H 1, 2: N.C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic

TRS10V65H-Toshiba.pdf

TRS10V65H Datasheet Preview — Preview of TRS10V65H PDF

Datasheet Details

Part number:

TRS10V65H

Manufacturer:

Toshiba ↗

File Size:

441.97 KB

Description:

Sic schottky barrier diode.

📁 Related Datasheet

TRS10A65C TRS10A65F TRS10E65C TRS10E65F TRS10E65H TRS1-0MCR00V

📌 All Tags

TRS10V65H SiC Schottky Barrier Diode Toshiba