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TRS10V65H Datasheet - Toshiba

TRS10V65H SiC Schottky Barrier Diode

TRS10V65H Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 27 nC (typ.) (4) Low reverse current: IR = 2.0 µA (typ.) 3. Packaging and Internal Circuit DFN8x8 TRS10V65H 1, 2: N.C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic

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Datasheet Details

Part number:

TRS10V65H

Manufacturer:

Toshiba ↗

File Size:

441.97 KB

Description:

Sic schottky barrier diode.

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TRS10V65H TRS10V65H SiC Schottky Barrier Diode Toshiba

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