TRS12E65H Datasheet, diode equivalent, Toshiba

TRS12E65H Features

• Diode (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 33 nC (typ.) (4) Low reverse current: IR = 2.4 µA (typ.) 3. Packaging

PDF File Details

Part number:

TRS12E65H

Manufacturer:

Toshiba (https://www.toshiba.com/)

File Size:

467.81kb

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📄 Datasheet

Description:

Sic schottky barrier diode.

TRS12E65H Application

• Applications
• Power Factor Correction
• Solar Inverters
• Uninterruptible Power Supplies
• DC-DC Converters 2. Feat

TAGS

TRS12E65H

Toshiba

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