Datasheet Specifications
- Part number
- TRS12E65H
- Manufacturer
- Toshiba ↗
- File Size
- 467.81 KB
- Datasheet
- TRS12E65H-Toshiba.pdf
- Description
- SiC Schottky Barrier Diode
Description
SiC Schottky Barrier Diode TRS12E65H 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppl.
Features
* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 33 nC (typ. ) (4) Low reverse current: IR = 2.4 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS12E65H 1: Cathode 2: Anode ©2022-2023 1 Toshiba Electronic Devices & StorageApplications
* Power Factor CorrectionTRS12E65H Distributors
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