TRS12E65H Datasheet - Toshiba

TRS12E65H - SiC Schottky Barrier Diode

TRS12E65H Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 33 nC (typ.) (4) Low reverse current: IR = 2.4 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L TRS12E65H 1: Cathode 2: Anode ©2022-2023 1 Toshiba Electronic Devices & Storage

TRS12E65H-Toshiba.pdf

TRS12E65H Datasheet Preview — Preview of TRS12E65H PDF

Datasheet Details

Part number:

TRS12E65H

Manufacturer:

Toshiba ↗

File Size:

467.81 KB

Description:

Sic schottky barrier diode.

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TRS12E65H SiC Schottky Barrier Diode Toshiba