* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 33 nC (typ.) (4) Low reverse current: IR = 2.4 µA (typ.) 3. Packaging and Internal Circuit DFN8x8 TRS12V65H 1, 2: N.C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic
TRS12V65H Datasheet (455.28 KB)
TRS12V65H
455.28 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
TRS12V65H
1. Applications
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Suppl.
📁 Related Datasheet
TRS1225 SOLID STATE RELAY (ToHo)
TRS1245 SOLID STATE RELAY (ToHo)
TRS12A65F SiC Schottky Barrier Diode (Toshiba)
TRS12E65H SiC Schottky Barrier Diode (Toshiba)
TRS1-0MCR00V Thermal Reed Switch (KEMET)
TRS1-0MCR01V Thermal Reed Switch (KEMET)
TRS1-0MLR00V Thermal Reed Switch (KEMET)
TRS1-0MSR01EV Thermal Reed Switch (KEMET)
TRS1-100MCR00V Thermal Reed Switch (KEMET)
TRS1-100MCR01V Thermal Reed Switch (KEMET)
