TRS4E65H - SiC Schottky Barrier Diode
TRS4E65H Features
* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 12 nC (typ.) (4) Low reverse current: IR = 0.6 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L TRS4E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corpo
