TRS4E65H Datasheet - Toshiba

TRS4E65H SiC Schottky Barrier Diode

TRS4E65H Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 12 nC (typ.) (4) Low reverse current: IR = 0.6 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L TRS4E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corpo

TRS4E65H-Toshiba.pdf

TRS4E65H Datasheet Preview — Preview of TRS4E65H PDF

Datasheet Details

Part number:

TRS4E65H

Manufacturer:

Toshiba ↗

File Size:

381.72 KB

Description:

Sic schottky barrier diode.

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TRS4E65H TRS4E65H SiC Schottky Barrier Diode Toshiba

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