TRS4E65H SiC Schottky Barrier Diode

Toshiba

Description

SiC Schottky Barrier Diode TRS4E65H 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppli.

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Datasheet Specifications

Part number: TRS4E65H
Manufacturer: Toshiba ↗
File Size: 381.72 KB
Datasheet: TRS4E65H-Toshiba.pdf
Description: SiC Schottky Barrier Diode

Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 12 nC (typ. ) (4) Low reverse current: IR = 0.6 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS4E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corpo

Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

TRS4E65H Distributors

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TRS4E65H SiC Schottky Barrier Diode Toshiba

Toshiba TRS4E65H-like datasheet