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TTA003 - Silicon PNP Epitaxial Type Bipolar Transistors

Key Features

  • (1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ. ) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power di.

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Datasheet Details

Part number TTA003
Manufacturer Toshiba
File Size 177.81 KB
Description Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet download datasheet TTA003 Datasheet

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Bipolar Transistors Silicon PNP Epitaxial Type TTA003 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Junction temperature Storage temperature VCBO -80 V VCEO -80 VEBO -7 (Note 1) IC -3 A (Note 1) ICP -5 IB -1.