TTA003
TTA003 is Silicon PNP Epitaxial Type Bipolar Transistors manufactured by Toshiba.
Features
(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 m A) (2) High-speed switching: tstg = 300 ns (typ.)
3. Packaging and Internal Circuit
1. Base 2. Collector (Heatsink) 3. Emitter
New PW-Mold
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Junction temperature Storage temperature
VCBO
-80
VCEO
-80
VEBO
-7
(Note 1)
-3
(Note 1)
-5
-1.5
(Tc = 25)
Tj
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.
Start of mercial production
2009-09
2014-01-24...
