TTA003 transistors equivalent, silicon pnp epitaxial type bipolar transistors.
(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.)
3. Packaging and Internal Circuit
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* Power Amplifiers
* Power Switching
2. Features
(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (.
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