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TTA005 - Silicon PNP Epitaxial Type Bipolar Transistors

Key Features

  • (1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 55 ns (typ. ) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltag.

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Datasheet Details

Part number TTA005
Manufacturer Toshiba
File Size 203.64 KB
Description Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet download datasheet TTA005 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon PNP Epitaxial Type TTA005 TTA005 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 55 ns (typ.) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltage Collector current (DC) VEBO -7 (Note 1) IC -5 A Collector current (pulsed) (Note 1) ICP -10 Base current Collector power dissipation (Ta = 25 ) IB -0.